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  microwave corporation 8 - 74 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 HMC311ST89 ingap hbt gain block mmic amplifier, dc - 6.0 ghz v00.0204 general description features functional diagram the HMC311ST89 is a gaas ingap heterojunction bipolar transistor (hbt) gain block mmic smt dc to 6 ghz ampli er. packaged in an industry standard sot89, the ampli er can be used as either a cascadable 50 ohm gain stage or to drive the lo of hmc mixers with up to +16.5 dbm output power. the HMC311ST89 offers 16 db of gain and an output ip3 of +31.5 dbm while requiring only 54 ma from a +5v supply. the darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. p1db output power: +15.5 dbm output ip3: +31.5 dbm gain: 16 db 50 ohm i/os industry standard sot89 package typical applications the HMC311ST89 is an ideal rf/if gain block or lo buffer ampli er for: ?cellular / pcs / 3g ?fixed wireless & wlan ?catv & cable modem ?microwave radio electrical speci cations, vs= 5.0 v, rbias= 22 ohm, t a = +25?c parameter min. typ. max. units gain dc - 1.0 ghz 1.0 - 4.0 ghz 4.0 - 6.0 ghz 14.0 13.0 12.5 16.0 15.0 14.5 db db db gain variation over temperature dc - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 6.0 ghz 0.004 0.007 0.012 0.007 0.012 0.016 db/ ? db/ ? db/ ? return loss input / output dc - 2.0 ghz 2.0 - 5.0 ghz 5.0 - 6.0 ghz 8 7 8 db db db reverse isolation dc - 6.0 ghz 20 db output power for 1 db compression (p1db) dc - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 6.0 ghz 13.5 12.0 10.0 15.5 15.0 13.0 dbm dbm dbm output third order intercept (ip3) dc - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 6.0 ghz 31.5 30 27 24 dbm dbm dbm dbm noise figure dc - 4.0 ghz 4.0 - 6.0 ghz 4.5 5 db supply current (icq) 54 ma note: data taken with broadband bias tee on device output.
microwave corporation 8 - 75 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 HMC311ST89 output return loss vs. temperature v00.0204 broadband gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature ingap hbt gain block mmic amplifier, dc - 6.0 ghz noise figure vs. temperature -20 -15 -10 -5 0 5 10 15 20 123456789 s21 s11 s22 response (db) frequency (ghz) 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 012345678 +25c +85c -40c gain (db) frequency (ghz) -20 -15 -10 -5 0 012345678 +25c +85c -40c input return loss (db) frequency (ghz) -20 -15 -10 -5 0 012345678 +25c +85c -40c output return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 012345678 +25c +85c -40c reverse isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 12345678 +25c +85c -40c noise figure (db) frequency (ghz)
microwave corporation 8 - 76 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 power compression @ 6 ghz p1db vs. temperature psat vs. temperature output ip3 vs. temperature power compression @ 1 ghz gain, power, oip3 & supply current vs. supply voltage @ 1 ghz HMC311ST89 v00.0204 ingap hbt gain block mmic amplifier, dc - 6.0 ghz 4 6 8 10 12 14 16 18 012345678 +25c +85c -40c p1db (dbm) frequency (ghz) 4 6 8 10 12 14 16 18 012345678 +25c +85c -40c psat (dbm) frequency (ghz) -4 -2 0 2 4 6 8 10 12 14 16 18 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -4 -2 0 2 4 6 8 10 12 14 16 18 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 10 12 14 16 18 20 22 24 26 28 30 32 34 012345678 +25c +85c -40c oip3 (dbm) frequency (ghz) 5 10 15 20 25 30 35 40 10 20 30 40 50 60 70 80 4.5 4.75 5 5.25 5.5 gain p1db psat oip3 icq gain (db), p1db (dbm), psat (dbm), oip3 (dbm) icq (ma) vs (vdc)
microwave corporation 8 - 77 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 outline drawing absolute maximum ratings collector bias voltage (vcc) +7 volts rf input power (rfin)(vcc = +3.9 vdc) +10 dbm junction temperature 150 ? continuous pdiss (t = 85 ?) (derate 5.21 mw/? above 85 ?) 0.34 w thermal resistance (junction to lead) 191 ?/w storage temperature -65 to +150 ? operating temperature -40 to +85 ? HMC311ST89 v00.0204 ingap hbt gain block mmic amplifier, dc - 6.0 ghz notes: 1. material package body: low stress injection molded plastic silica and silicon impregnated. 2. lead and ground paddle material: copper alloy 3. lead and ground paddle plating: sn/pb solder 4. dimensions are in inches [millimeters]. 5. lead spacing tolerance is non-cumulative 6. pad burr length shall be 0.15mm maximum. pad burr height shall be 0.05mm maximum. 7. package warp shall not exceed 0.05mm. 8. all ground leads and ground paddle must be soldered to pcb rf ground.
microwave corporation 8 - 78 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 HMC311ST89 v00.0204 ingap hbt gain block mmic amplifier, dc - 6.0 ghz application circuit pin descriptions pin number function description interface schematic 1 rfin this pin is dc coupled. an off chip dc blocking capacitor is required. 3 rfout rf output and dc bias for the output stage. 2, 4 gnd these pins and package bottom must be connected to rf/dc ground. recommended component values component frequency (mhz) 50 900 1900 2200 2400 3500 5200 5800 l1 270 nh 56 nh 18 nh 18 nh 15 nh 8.2 nh 3.3 nh 3.3 nh c1, c2 0.01 ? 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf note: 1. select rbias to achieve icq using equation below, rbias > 22 ohm. 2. external blocking capacitors are required on rfin and rfout. icq = vs - 3.9 rbias
microwave corporation 8 - 79 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 HMC311ST89 v00.0204 ingap hbt gain block mmic amplifier, dc - 6.0 ghz evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. a suf cient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 108313* item description j1 - j2 pc mount sma connector j3 - j4 dc pin c1, c2 capacitor, 0402 pkg. c3 100 pf capacitor, 0402 pkg. c4 1000 pf capacitor, 0603 pkg. c5 2.2 ? capacitor, tantalum r1 resistor, 0805 pkg. l1 inductor, 0603 pkg. u1 HMC311ST89 pcb** 107368 evaluation pcb ** circuit board material: rogers 4350 * reference this number when ordering complete evaluation pcb.


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